Title:
FORMATION OF INSULATING FILM
Document Type and Number:
Japanese Patent JP3243816
Kind Code:
B2
Abstract:
PURPOSE: To prevent a silicon nitride film from exfoliating by forming a first insulating film on a board by using silane and nitrogen as a source gas, and forming a second insulating film continuously by using silane, nitrogen, and ammonia as a source gas.
CONSTITUTION: After the CVD chamber silicon board of a single wafer plasma CVD device is loaded, heating of the silicon board, letting of silane and nitrogen into the chamber, and stabilization of the internal pressure of the chamber are performed. And an RF output is applied under this condition, and a first silicon nitride film 2 is predeposited on the silicon board 1. After the deposition of a silicon nitride film of a desired thickness, the RF output is turned off. Consequently, it becomes possible to prevent the exfoliation of the silicon nitride film from the board surface unlike former methods.
Inventors:
Masaki Saitoh
Application Number:
JP1052992A
Publication Date:
January 07, 2002
Filing Date:
January 24, 1992
Export Citation:
Assignee:
ソニー株式会社
International Classes:
C23C16/34; H01L21/318; (IPC1-7): H01L21/318; C23C16/34
Domestic Patent References:
| JP547744A | ||||
| JP547753A |
Attorney, Agent or Firm:
Fujiya Shiga (1 person outside)
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