PURPOSE: To generate only a single nucleus on a nucleus formation face and to grow a single crystal even when the nucleus formation density of the nucleus formation face is extremely high as compared with a face where no nucleus is formed by a method wherein a material whose nucleus formation density is high and which is different form a material constituting the nucleus formation face is arranged as a dummy pattern.

CONSTITUTION: A material 2 whose nucleus formation density is very high is deposited on a substratum material 1 to form a nucleus formation face. A material 3 whose nucleus formation density is lower than that of the nucleus formation face is deposited in about 200 to 600 to form a face where no nucleus is formed. Then, a material 4 whose nucleus formation density is high is patterned; a dummy pattern 5 is formed to be adjacent to a part where the nucleus formation face is formed. Then, the face where no nucleus is formed is patterned and etched. A small area which is sufficient to generate only one nucleus to be formed as a single crystal is revealed to form the nucleus formation face. A crystal nucleus 9 is generated, by a CVD method, on a substrate obtained in this manner. At this time, the nucleus is generated on the nucleus formation face 6 and on the dummy pattern 5. When a growth operation progresses, the nucleus 10 generated from the nucleus formation face is grown as the single crystal.