Title:
FORMATION METHOD OF SILICON OXIDE FILM
Document Type and Number:
Japanese Patent JPH08236518
Kind Code:
A
Abstract:
PURPOSE: To form a silicon oxide film which is small in an OH content group and excellent in moisture permeability preventing properties and coated with a high offset.
CONSTITUTION: A mixed gas of an oxidizing gas containing alkoxy silane and hydrogen is introduced, thereby forming a silicon oxide film having an Si-H binding based on a plasma CVD method. This makes it possible to manufacture a semiconductor device having a high density and high reliability multilayer wiring at low cost.
Inventors:
SAITO MASAYOSHI
HONMA YOSHIO
KUDO YUTAKA
HONMA YOSHIO
KUDO YUTAKA
Application Number:
JP3967195A
Publication Date:
September 13, 1996
Filing Date:
February 28, 1995
Export Citation:
Assignee:
HITACHI LTD
HITACHI ELECTR ENG
HITACHI ELECTR ENG
International Classes:
H05H1/46; C23C16/50; H01L21/205; H01L21/285; H01L21/316; H01L21/768; H01L23/522; (IPC1-7): H01L21/316; C23C16/50; H01L21/205; H01L21/285; H01L21/768; H05H1/46
Attorney, Agent or Firm:
Ogawa Katsuo
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