PURPOSE: To enable formation of a micropattern of a superconductive device through a lift-off method using a pattern by forming a photoresist film having phenolic OH groups high in UV absorption in only one time on a substrate, and developing it in only one time to form a pattern.
CONSTITUTION: An SiO film is vapor-deposited on a silicon wafer substrate 21 in vacuum, and after deposition of an aluminum plate on this film, a photoresist film 25 having phenolic OH groups, such as p-hydroxystyrene. The film 25 contains a equimolar condensate of 3-(azidostyryl)-5,5'-dimethyl-2-cyclohexen-1-one or the like aromatic azido compd. having an aldehyde group, and isophorone. The desired parts of this film 25 are exposed to UV light of 300W450nm wavelengths to render the exposed parts hardly soluble, and the unexposed parts are eluted with an alkaline soln. to form a pattern having an inverted trapezoid section. A superconductive thin film 24 is vapor-deposited by using this pattern as mask, and the remaining film 25 and the film 24 overlying thereon are removed by the lift-off method. As a result, a micropattern film 24 can be obtained with high- precision size.
HASHIMOTO MICHIAKI
HASEGAWA NOBUO
TANAKA TOSHIHIKO
MIYAMOTO NOBUO
