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Title:
FORMATION OF MICROSTRUCTURE
Document Type and Number:
Japanese Patent JP3420350
Kind Code:
B2
Abstract:

PURPOSE: To realize electrical connection with a substrate by bonding a sacrifice layer of resin film and an adhesive layer formed on a first substrate to a structure body layer formed on a second substrate, removing the second substrate, connecting the first substrate and the structure body layer mechanically through a supporting layer, and then removing the sacrifice layer and the adhesive layer.
CONSTITUTION: A photoresist (PL) 101 is patterned on a second Si substrate 4 and then it is etched to form a beam pattern 5. An adhesive layer 7 is then formed on the first glass substrate 1. The second substrate is then pressure bonded to the first substrate on which a sacrifice layer 6 and the adhesive layer 7 are formed. The second substrate is further etched to form an Si beam 2 on which a supporting layer, i.e., a thin Al film 8, is formed followed by formation of a PL 102. Subsequently, the thin Al film 8 is patterned to form a pattern of supporting part 3. Finally, the resin film is removed from the PL 102 and the lower part of the beam 2 by plasma etching thus forming an air gap 9.


Inventors:
Takayuki Yagi
Application Number:
JP21586194A
Publication Date:
June 23, 2003
Filing Date:
September 09, 1994
Export Citation:
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Assignee:
Canon Inc
International Classes:
H02N1/00; B32B15/08; B81C1/00; C23F1/00; C23F4/00; G02B26/08; (IPC1-7): B81C1/00; B32B15/08; C23F1/00; C23F4/00; G02B26/08; H02N1/00
Domestic Patent References:
JP536347A
JP4296604A
JP3174112A
JP274582A
JP3234982A
JP6178565A
JP8504266A
Other References:
【文献】特許3181174(JP,B2)
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)