Title:
FORMATION OF OPTICAL WAVEGUIDE
Document Type and Number:
Japanese Patent JP3457836
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the complication of production stages and structures, to improve reproducibility as a device and to prevent the increase of the cost of the device by exposing a silicon substrate to oxygen which is formed as plasma or is activated or gas having oxygen atoms in molecules, thereby oxidizing this silicon substrate.
SOLUTION: A masking layer 2 opened only in the region to constitute an optical waveguide is disposed on the silicon substrate 1. The masking layer 2 is formed by making the region 3 to constitute the optical waveguide porous by an anodic chemical conversion treatment. The silicon substrate 1 is carried into a vacuum apparatus in order to remove moisture sticking to the surface of the porous silicon region 3. The substrate is then heated up to 200 to 400°C in the state of ≤5×10-3 Torr and further vacuum evacuation is executed down to ≤5×10-6 Torr. The substrate is heated up to 300 to 500°C and the oxygen is introduced into the apparatus. The introduced gas is thereafter activated or converted to the plasma by RF or electron cyclotron, microwaves, etc., and the silicon substrate 1 is exposed into this atmosphere, by which the oxidation of the region 3 made porous is executed.
Inventors:
Gota Nishimura
Application Number:
JP10796597A
Publication Date:
October 20, 2003
Filing Date:
April 24, 1997
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
G02B6/13; (IPC1-7): G02B6/13
Domestic Patent References:
| JP917733A | ||||
| JP5273426A | ||||
| JP60251142A | ||||
| JP9292540A | ||||
| JP10133047A | ||||
| JP10133048A | ||||
| JP10160950A | ||||
| JP10101321A | ||||
| JP57149749A | ||||
| JP992639A |
Other References:
【文献】国際公開91/010931(WO,A1)
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