Title:
FORMATION OF ORIENTED TA2O5 THIN FILM
Document Type and Number:
Japanese Patent JPH04362017
Kind Code:
A
Abstract:
PURPOSE: To obtain the dense, homogeneous and highly oriented thin film low in impurities by oxidizing a specified raw gas introduced into a reactor along with an inert carrier gas with an oxidizing agent so as to grow the thin film on a base plate by chemical vapor deposition, etc.
CONSTITUTION: A tantalum alkoxide or ≥1 kind among β-diketone-based metallic complexes are introduced as the gaseous raw material into a reactor along with an inert carrier gas such as argon. The gaseous raw material is oxidized by ≥1 kind of oxidizing agent among O2, steam, nitrous oxide, etc., to form an oriented Ta2O5 thin film on the base plate of Si, etc., by plasma chemical vapor deposition(CVD), photo-CVD, etc.
Inventors:
SAKASHITA YUKIO
Application Number:
JP16084891A
Publication Date:
December 15, 1992
Filing Date:
June 06, 1991
Export Citation:
Assignee:
NIPPON MINING CO
International Classes:
C01G35/00; C23C16/40; C30B29/16; H01L21/822; H01L27/01; H01L27/04; H03H3/08; (IPC1-7): C01G35/00; C23C16/40; C30B29/16; H01L27/01; H01L27/04; H03H3/08
Attorney, Agent or Firm:
Hiroshi Namikawa