PURPOSE: To obtain a fine pattern of high accuracy which has excellent resistance to dry etching and sensitivity to high energy radiation by using a polymer contg. a benzene ring as a base polymer.

CONSTITUTION: A resist material formed by combining an acid soluble polymer and a dissolution prohibiting agent which is made acid soluble by irradiation of the high energy radiation is used in this method. Any polymer (including copolymer) having an acid soluble functional group can be used for the acid soluble polymer. The dissolution prohibiting agent is required to be made acid soluble when irradiated with the high energy radiation and a compd. which is decomposed and gassified by the irradiation of the high energy radiation to form gas is useful as such compd.; for example, 2-methylpentene-1-sulfone.