PURPOSE: To provide a resist pattern formation method of a low cost which can be controlled readily when a resist pattern is formed.

CONSTITUTION: A first exposure process is carried out and a resist film 2 is exposed by using a mask 3. Then, a first development process is carried out and a step part 4 is formed in the resist film 2. A second exposure process is carried out and the resist film 2 is exposed. In the process, light is 180° out of phase in the step part 4 and a range which is not exposed to light is produced along the step part 4 in the resist film 2. Then, a second development process is carried out and the part of the film 2 which is not exposed to light is removed. Then, a resist pattern is formed along the step part 4. Since this invention dispenses with a phase shifter and is little influenced by light diffraction, control is easy during resist pattern formation and a cost can be reduced.