Title:
FORMATION OF SILICON NITRIDE FILM
Document Type and Number:
Japanese Patent JPS61117841
Kind Code:
A
Abstract:
PURPOSE:To obtain Si nitride films of high quality by low-pressure CVD system without decreasing the formation efficiency also to large-diameter wafers of 100phi or more, by setting the reaction pressure within a specific range. CONSTITUTION:Using three kinds of wafers with different diameters 100phi, 125phi, 150phi, Si nitride films were formed with silane series gas ammonia by low-pressure CVD under different pressures. Then, examination of the rate of non-defectives showed that setting the reaction pressure within a range of about 0.05-0.25Torr enables the formation of uniform films with high yield also to large-diameter wafers and the formation of good Si nitride films as a whole with high efficiency. The efficiency could be further improved by setting the reaction pressure preferably within a range of 0.1-0.2Torr, and an effective range of temperatures is 700-1,000 deg.C.
Inventors:
SAKAI HIDEO
MIZUTANI TETSUYA
YOSHIMI TAKEO
MIZUTANI TETSUYA
YOSHIMI TAKEO
Application Number:
JP23830184A
Publication Date:
June 05, 1986
Filing Date:
November 14, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
C23C16/34; H01L21/318; (IPC1-7): H01L21/318
Attorney, Agent or Firm:
Akio Takahashi