PURPOSE: To prevent the adsorption of boron (B) at the interface between a substrate and an upper film and to obtain a stabilized high-precision semiconductor device at the time of forming a thin film to be used in the production process of the device.
CONSTITUTION: The thin film of the insulator, semiconductor, metal, etc., is formed on a substrate by using a film forming device by CVD or PVD. In this case, a dehydrating agent such as Ca, Ba or Sr is introduced into the film forming device to reduce the moisture content of the atmosphere, and then the thin film is formed on the substrate. When a silicon gate MOSFET is produced, for example, Ca is spattered in the CVD device to reduce the moisture content of the atmosphere, and then a polysilicon 4 is formed on a gate oxide film 3. Consequently, an unnecessary inversion layer is not formed, and the threshold value is not fluctuated.
IIZUKA JUNICHI
NOSHIRO HIDEYUKI
