Title:
FORMATION OF THIN FILM
Document Type and Number:
Japanese Patent JPH0689863
Kind Code:
A
Abstract:
PURPOSE: To pile up reaction gas on a substrate by thermal decomposition while arranging a plurality of base bodies in a tubular reactor in the vertical direction and using an exhaust system.
CONSTITUTION: During thermal decomposition of reactive gas by using a vertical CVD device, inert gas is simultabeously introduced so as to suppress particles generated from an L-shaped tube without oxidizing the base body surfaces. Thereby, reliability and yield of a semiconductor device can be improved by in every way preventing adhesion of particles to the base body surfaces.
Inventors:
YANO TAKASHI
Application Number:
JP24054592A
Publication Date:
March 29, 1994
Filing Date:
September 09, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
C23C16/44; C23C16/455; H01L21/205; H01L21/31; (IPC1-7): H01L21/205; C23C16/44; H01L21/31
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
Next Patent: JIG FOR SEMICONDUCTOR WAFER HEAT TREATMENT