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Title:
FORMATION OF TITANIUM OXIDE MEMBRANE
Document Type and Number:
Japanese Patent JPH10139482
Kind Code:
A
Abstract:

To provide a method for safely forming a titanium oxide membrane by dipping a substrate into an aqueous solution of titanyl sulfate to form the titanium oxide membrane on the surface of the substrate by a hydrating reaction of the titanyl sulfate.

A substrate is formed by washing and drying a soda-lime glass, etc., having a prescribed shape. The substrate is dipped into an aqueous solution of titanyl sulfate having 0.01-0.5mol/l concentration after about 10min from the time reached to the temperature of ≥40°C by heating the solution, hydrating the titanyl sulfate for about 1hr in the dipped state to deposit titanium oxide on the substrate by regulating the rate of membrane formation to ≤1000nm/hr. Further, the deposited substrate is heat-treated at 300-800°C to obtain an anatase- type titanium oxide membrane having a high crystallinity in the method for forming the titanium oxide membrane.


Inventors:
KISHIMOTO KOJI
TAKAHAMA KOICHI
NAKAGAWA NAOHARU
Application Number:
JP29087096A
Publication Date:
May 26, 1998
Filing Date:
October 31, 1996
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
C01G23/053; C03C17/25; (IPC1-7): C03C17/25; C01G23/053
Attorney, Agent or Firm:
Shigeji Sato (1 person outside)