PURPOSE: To suppress defects, such as pinholes, and to form denser vapor phase films by making combination use of materials which are completely evaporated with materials which are liable to generate coarse particles at the time of depositing these materials by vacuum evaporation.

CONSTITUTION: A target 1-b for vapor deposition consisting of materials (SiO2, Al2O3, etc.) which are completely evaporated is used in combination with a target 1-a for evaporation composed of the materials (SiC, AlN, etc.) which are liable to generate the coarse particles at the time of subjecting these materials to vacuum vapor deposition by high-energy beams. These targets 1-a, 1-b are irradiated with the laser beams 2-a, 2-b respectively in a vacuum and vapor phase films 14 are formed on a substrate 4 by the evaporated particles 12-a, 13-b generated in such a manner. The SiC and the SiO2, are so evaporated that the weight ratio (%) of the SiO2 to the SiC attains about 0.2 to 2 times when for example, the SiC and the SiO2, are combined. The vapor phase film 14 improved in strength and sticking force to the substrate 4 is formed in such a manner.