To provide the forming device of a piezoelectric thin film for forming a piezoelectric thin film of high quality wherein temperature of the substrate of large area is made into uniform, or equality and optimality of crystallinity and of composition are excellent in reproducibility.
In a vacuum chamber 11, a substrate holder 13 in which an aperture for holding a substrate 14 for forming a perovskite type piezoelectric thin film containing at least lead or titanium is formed, a sputter target 12 which is arranged on a cathode and disposed opposite to the substrate 14 held by the substrate holder 13, a heater 16 for substrate heating for heating the substrate 14, and a soaking board 22 which is arranged on the substrate 14 in order that heat from the heater 16 for substrate heating may heat equally or uniformly the whole surface of the substrate 14 are arranged. By radiant heat from the soaking board 22, the temperature of the substrate 14 can be made uniform, so that the piezoelectric thin film of high quality can be formed with superior reproducibility.
KOMAKI KAZUKI
YASUMI MASAHIRO
NOMURA KOJI
Tomoyasu Sakaguchi
Hiroki Naito
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