Title:
FORMING DEVICE FOR SILICON NITRIDE FILM
Document Type and Number:
Japanese Patent JPS5934639
Kind Code:
A
Abstract:
PURPOSE:To increase a nitriding rate, and to form the silicon nitride film of compact structure by overlapping DC voltage within a predetermined range to high frequency and supplying the voltage in the device which directly nitrides a silicon substrate under the state of plasma at a low temperature in the surface of said silicon substrate. CONSTITUTION:The silicon substrates 4 are each set up among electrodes 7 on a susceptor 3 while being mutually opposed, and entered in a reaction pipe 1, and a flange 6 is closed. The inside of the reaction pipe 1 is evacuated to a high degree in approximately 10<-5>-10<-7> Torr, and a nitriding gas, such as N2, NH3, N2H4 or the like is introduced into the reaction pipe 1 from a gas supply system. Sections among the electrodes 7 for generating plasma are supplied with high frequency power within a range of 50Hz- 13.56MHz while DC voltage in normally approximately 100-600V is overlapped to the high frequency from a DC power supply and applied. The nitriding gas in the reaction pipe 1 is changed into plasma by a high-frequency electric field and currents in approximately 1A at its maximum flow, and the silicon substrates 4 are nitrided directly. Action which draws ionized nitrogen near the interface between the surface of the substrate 4 and the silicon nitriding film is generated by applying a fixed DC electric field to the ionized nitrogen, and the nitriding rate of silicon is increased.
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Inventors:
HIRAYAMA MAKOTO
HIRAO TADASHI
HIRAO TADASHI
Application Number:
JP14590482A
Publication Date:
February 25, 1984
Filing Date:
August 21, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/318; C04B41/00; (IPC1-7): H01L21/318
Domestic Patent References:
| JPS5767009A | 1982-04-23 | |||
| JPS5368171A | 1978-06-17 | |||
| JPS547274A | 1979-01-19 |
Attorney, Agent or Firm:
Shinichi Kusano