Title:
FORMING METHOD OF GAAS THIN-FILM
Document Type and Number:
Japanese Patent JPS59224117
Kind Code:
A
Abstract:
PURPOSE:To form a polycrystalline thin-film or a single crystal thin-film by forming a GaAs thin-film on a spinel single crystal substrate using a (001) face as a principal surface through a molecular-beam epitaxy method under the state in which the substrate is heated at a temperature of 400-560 deg.C. CONSTITUTION:A spinel single crystal substrate using a (001) face as a principal surface is employed, and the principal surface is mirror-ground, and mirror-finished by using an etching liquid (250 deg.C) at the rate of 1 to 1 of sulfuric acid and nitric acid. The substrate is encased in an evaporation chamber, the inside of the chamber is kept under a vacuum state and the surface of the substrate is purified through heating for approximately 5hr at a temperature of approximately 600 deg.C, the temperature of the substrate is dropped to 400-560 deg.C, and a GaAs thin-film is formed on the substrate through a molecular-beam epitaxy method. A polycrystalline thin-film or a single crystal thin-film consisting of GaAs can be formed in response to the temperature of the substrate.
Inventors:
MARUYAMA SUSUMU
Application Number:
JP9913483A
Publication Date:
December 17, 1984
Filing Date:
June 03, 1983
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/203; (IPC1-7): H01L21/203; H01L21/26; H01L21/86
Attorney, Agent or Firm:
Shoji Tanaka
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