FORMING METHOD OF INTERLAYER INSULATING FILM

Title:

FORMING METHOD OF INTERLAYER INSULATING FILM

Document Type and Number:

Japanese Patent JP3481395

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To obtain an interlayer insulating film whose specific dielectric constant can be set at an arbitrary low value and, further, which has stable characteristics by a simple process.
SOLUTION: When raw monomers A and B are vaporized in a vacuum and deposited and polymerized on a substrate 4, SiO2 which is vaporizing material 100 is deposited on the substrate 4 to form a composite film and, further, the composite film is subjected to the application of an ultraviolet radiation and a heat treatment for the cross-linking reaction and the polymerization. Diamine such as 4,4'-diaminodiphenylmethane (MDA), etc., and diisocyanate such as 4,4'-diphenylmethane diioscyanate (MDI) are used as the raw monomers A and B.

Inventors:

Masayuki Iijima
Yoshiyuki Ukishima
Masatoshi Sato

Application Number:

JP16530996A

Publication Date:

December 22, 2003

Filing Date:

June 05, 1996

Export Citation:

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Assignee:

ULVAC, Inc.

International Classes:

C08G18/08; C08G18/00; C08G18/09; C08G18/32; C23C16/30; H01L21/31; H01L21/312; H01L21/768; H01L23/522; (IPC1-7): H01L21/31; C08G18/09; C08G18/32; H01L21/312; H01L21/768

Domestic Patent References:

JP9249851A
JP4147651A

Attorney, Agent or Firm:

Shigeo Ishijima (1 outside)

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