PURPOSE: To enable fine line pattern, hardly formed by photolithography, to be formed easily.

CONSTITUTION: After the formation of a pattern 13 on a substrate 11 in the first step, a side wall forming film 14 is formed as if covering the pattern 13 later to form a sidewall 15 out of the sidewall forming film 14 on the sidewall of the pattern 13. Next, the pattern 13 is removed in the second step. Resultantly, the remaining sidewall 15 is to become a wire pattern 16. Besides, the other step to remove the upper part only of the wire pattern 16 can be performed. Otherwise, after the formation of another sidewall outside the sidewall forming film 14, the sidewall forming film 14 is etched away and then the pattern 13 and the other sidewall are removed so as to form the title wire pattern.