PURPOSE: To lessen a barrier between a P-type ZnSe layer and an electrode by a method wherein a Te thin film layer is formed on the P-type ZnSe layer, and an Au layer is formed on the Te thin film, which is thermally treated.

CONSTITUTION: A P-type ZnSe layer 2 which contains nitrogen as acceptor is formed of Zn and Se as materials on a GaAs substrate 1 through a molecular beam epitaxial growth method making use of N2 radical as dopant material. In succession, a Te thin film 3 and an Au layer 4 are formed on the; P-type ZnSe layer 2 in this sequence through a vacuum evaporation method, then the GaAs substrate 1 is subjected to an annealing process in an atmosphere of hinny gas (mixed gas of H2 and N2 in the volume ratio 1:10), and electrodes 5a and 5b are formed. By this setup, a barrier between the P-type ZnSe layer 2 and the electrodes 5a and 5b can be lessened.