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Patent Searching and Data


Title:
FORMING METHOD FOR POSITIVE TYPE RESIST PATTERN
Document Type and Number:
Japanese Patent JPS5588051
Kind Code:
A
Abstract:

PURPOSE: To form a superior pattern free from swelling phenomena or the like, by irradiating by electron beam or X-ray a positive type resist having a 3-dimensional reticular structure using methacrylic ester as a basic structure, and by developing a latent resist pattern with an organic solvent.

CONSTITUTION: (a) Units derived from methacrylic ester of the formula shown (R is 1W6C alkyl, haloalkyl, benzyl, or cyclohexyl); (b) units derived from monoolefinic unsaturated carboxylic acid having 1W3 C3WC12 groups; and (c) units derived from methacryloyl chloride are polymerized to form a 3-dimensional structure. The positive type resist having this structure are inrradiated by electron beam, X-ray, ultraviolet ray, or the like to draw a pattern, and this is developed with mixed solvents of acetone and an aliphatic saturated lower alcohol.


Inventors:
KITAMURA TATEO
YONEDA YASUHIRO
KITAKOUJI TOSHISUKE
Application Number:
JP15997778A
Publication Date:
July 03, 1980
Filing Date:
December 27, 1978
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G03F7/039; G03F7/32; H01L21/027; (IPC1-7): G03C1/72; G03C5/24; G03F7/00; H01L21/30