Title:
FORMING METHOD OF SEMICONDUCTOR CRYSTALLIZED FILM
Document Type and Number:
Japanese Patent JPH05152205
Kind Code:
A
Abstract:
PURPOSE: To improve productivity by crystallizing a semiconductor layer formed onto a substrate at a time extending over a wide region.
CONSTITUTION: A foundation layer 2, an amorphous or polycrystalline semiconductor layer 3, and a protective layer 14 are formed successively onto a substrate 1, a high-temperature body 5 with projecting sections 5c is abutted temporarily onto the protective layer 4, and the semiconductor layer 3 is melted and solidified, thus crystallizing the semiconductor layer 3.
Inventors:
MATSUDA TOSHIYA
Application Number:
JP31567891A
Publication Date:
June 18, 1993
Filing Date:
November 29, 1991
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
H01L21/20; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L29/784