PURPOSE: To form a resistor easily with excellent controllability by shaping the silicide layer of a transition metal as the resistor formed by the interface reaction of an amorphous silicon layer or an amorphous silicon compound layer and a transition metal layer.
CONSTITUTION: An amorphous silicon hydride layer 2 is deposited on a predetermined substrate 1, and a chromium layer 3 is shaped selectively only in regions 3a as electrodes and a region 36 as a resistor through a sputtering method using a metallic mask to the upper layer of the layer 2. Lastly, the chromium layer on another region, the region 3b as the resistor, is removed through etching, leaving the chromium layers 3 only in the regions 3a as the electrodes through a photolithographic method. A chromium silicide layer formed by the interface reaction of the chromium layer and the amorphous silicon layer remains in the region as the resistor at that time, and the chromium silicide layer functions as a resistance layer R1. Accordingly, the desired resistance layer can be acquired extremely easily.
MIYAKE TSUNEO
MATSUNO AKIRA
NAKAGAWA TORU
TSURUMAKI NAOYA
