Title:
FORMING METHOD OF TRANSPARENT ELECTRODE
Document Type and Number:
Japanese Patent JP2008004405
Kind Code:
A
Abstract:
To control an etching speed of a ZnO-based transparent conductive film at a speed suitable for patterning.
This is a forming method of a transparent electrode comprising a process to form a transparent conductive film having ZnO added with Mg on a substrate and a process to form patterning of the transparent conductive film using an etching liquid containing HCl. Furthermore, one kind or two kinds selected from Al, B, and Ga are added to the transparent conductive film. Thereby, etching speed of the ZnO-based transparent electrode can be made slow and improvement in controllability at the time of patterning can be achieved.
Inventors:
MATSUBARA KOJI
NIKI SAKAE
TANPO HITOSHI
NIKI SAKAE
TANPO HITOSHI
Application Number:
JP2006173315A
Publication Date:
January 10, 2008
Filing Date:
June 23, 2006
Export Citation:
Assignee:
NAT INST OF ADV IND & TECHNOL
International Classes:
H01B13/00; C23C14/08
Domestic Patent References:
| JP2004259549A | 2004-09-16 | |||
| JPH08199343A | 1996-08-06 | |||
| JPH10329257A | 1998-12-15 | |||
| JP2005307269A | 2005-11-04 |