To provide a process for forming a waveguide.
In this process, an optical waveguide is formed by depositing a compound semiconductor material on a substrate with chemical vapor deposition. At this time, since a dielectric mask affects the deposition rate of the compound semiconductor material on the substrate in its area in the vicinity of the mask, distribution of the waveguide to be formed with a mask having selected mask dimensions, is subjected to modeling and compared with a desired distribution. When the modeled distribution is not allowably similar to the desired distribution, the mask dimensions are corrected. Distribution of the waveguide to be formed with the corrected mask having corrected dimensions is again subjected to modeling and the modeled distribution is compared again with the desired distribution. This process is repeatedly performed until the modeled distribution becomes sufficiently similar to the desired distribution. After the mask dimensions are finally selected, a mask is formed on the substrate and a compound semiconductor waveguide is formed on the substrate by using selective area growth(SAG).
HYBERTSEN MARK S
PEOPLE ROOSEVELT
