Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3229474
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor light emitting device which can form light emitting parts at high density and uses edge emitting type light emitting diode array of high reliability and long life.
CONSTITUTION: An edge emitting type light emitting diode consists of a lamination structure containing at least a light emitting layer 14 of a light emitting diode, and electrodes 20, 24 for generating light from the light emitting layer, and the optical output is obtained from the lamination end surface 10. The semiconductor light emitting device consists of an edge emitting type light emitting diode array formed by electrically and specially isolating each of the layers of the edge emitting type light emitting diode, with a plurality of isolation trenches 3 arranged at equal intervals. On the end surface in the leading-out direction of a wiring 23 of each of the diodes 1 constituting the array, at least one surface 19 whose angle to the substrate 11 surface is larger than 90° is formed. Thereby the necessary wiring film thickness is obtained at the corner part of a step difference, and the disocnnection or the like of wirings can be prevented, so that a semiconductor light emitting device provided with an edge light emitting type light emitting diode array of high reliability and long life can be realized.
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Inventors:
Bell do Tsuyoshi
Application Number:
JP33376193A
Publication Date:
November 19, 2001
Filing Date:
December 27, 1993
Export Citation:
Assignee:
株式会社リコー
International Classes:
B41J2/44; B41J2/45; B41J2/455; H01L33/08; H01L33/14; H01L33/30; H01L33/40; (IPC1-7): H01L33/00; B41J2/44; B41J2/45; B41J2/455
Domestic Patent References:
| JP58444A | ||||
| JP537027A | ||||
| JP4168775A |
Attorney, Agent or Firm:
Toru Kabayama (1 person outside)
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