PURPOSE: To easily apply frequency adjustment of a high frequency element especially with high accuracy by coating an SiOx film, a Ta2O5 film and an Si3N4 film on the SiO2 film with a proper thickness while measuring, e.g., the oscillating frequency.
CONSTITUTION: A drive electrode 4 is formed in the middle of the upper face of a piezoelectric substance 3 sliced from a 36° Y-XLiTaO3 in the surface acoustic wave element 11, a reflecting electrode 5 is formed to the left and right of the drive electrode 4 and a silicon dioxide film 6 whose refractive index is 1.46±0.01 is laminated on the electrode 5 by the plasma CVD method. A silicon oxide film 12, a pentoxide tantalium film or a silicon nitride film is laminated on the film 6 in a proper thickness by the electron beam vapor deposition method to adjust the frequency. Thus, the fine adjustment with excellent productivity with high frequency elements especially is attained.
FUJIWARA YOSHIAKI
SATO KIYOSHI
| JPS5833310A | 1983-02-26 | |||
| JPS555924A | 1980-01-17 | |||
| JPS6177407A | 1986-04-21 |