PURPOSE: To obtain high sensitivity and superior electrophotographic characteristics, by laminating an organic charge transfer layer having n type or p type conductivity on a photosensitive layer made of H doped amorphous silicon having p-n junction adjacently to the same conductivity type photosensitive layer.
CONSTITUTION: p type amorphous silicon layer a-SiH(p) doped with 10W40atom% H and boron or the like, or n type amorphous silicon layer a-SiH(n) doped with phosphorus or the like is formed on conductive substrate S. Then, an amorphous silicon layer a-SiH(n) or a-SiH(p) of a type different from the above layer is laminated to form a photosensitive layer having p-n junction and thickness ≤3μm. Next, n or p type organic charge transfer layer CT(n) or CT(p) of conductivity type same as that of the p-n junction lyaer is formed. A charge blocking layer (B) made of an insulator, such as SiO2 may be formed on the side of the photosensitive layer not contacting layer CT. The uppermost photosensitive layer is charged negatively or positively in accordance with p type or n type of the charge transfer layer, respectively.
MIZOBUCHI YUUZOU
AZUMA AKIO
TAMURA HIROSHI
TAKEDA TAKASHI
NAGATA MASATAKA
| JPS54143645A | 1979-11-09 |
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