FURNACE CORE TUBE FOR PRODUCING SEMICONDUCTOR AND REPRODUCTION THEREOF

Title:

FURNACE CORE TUBE FOR PRODUCING SEMICONDUCTOR AND REPRODUCTION THEREOF

Document Type and Number:

Japanese Patent JPS61266335

Kind Code:

A

Abstract:

PURPOSE: To increase the strength of a large-sized furnace core tube at high temps. by integrating the inner surface part consisting of a quartz glass layer and the outer surface part consisting of an Al2O3-Al-Si composite into a tubular structure.

CONSTITUTION: The inside of a quartz glass tube is hermetically sealed. The outer surface part alone is vapor-deposited with high-purity (e.g., 99.9%) Al under reduced pressure or in an inert atmosphere. The SiO2 in the outer surface part of the tube reacts with Al by the treatment and only the layer of the outer surface part of the tube is formed with an Al2O3-Al-Si composite. The tube is then cut in specified size to obtain a desired furnace core tube. The composite layer is preferably composed of 50W90wt% Al2O3, 5W25wt% Al and 2W25wt% Si.

Inventors:

YAMAGUCHI MASAYOSHI
MEGURO KAZUNORI
MATSUO HIDEYASU
SASAKI YASUMI

Application Number:

JP10693285A

Publication Date:

November 26, 1986

Filing Date:

May 21, 1985

Export Citation:

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Assignee:

TOSHIBA CERAMICS CO

International Classes:

C03C21/00; C03C17/09; C04B35/10; H01L21/22; (IPC1-7): C03C21/00; C04B35/10; H01L21/22

Attorney, Agent or Firm:

Toru Tanabe

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