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Title:
FURNACE FOR HEAT-TREATING SILICON WAFER
Document Type and Number:
Japanese Patent JP2007295005
Kind Code:
A
Abstract:

To provide a furnace that achieves high-process performance while enhancing maintainability.

The furnace has an apparatus for cooling a plurality of heating elements (12) that radiates thermal energy by using a source of air. The furnace includes a flame and a plurality of heating element chambers (11). The heating element chambers form spaces for accepting the heating element, which in turn includes a process chamber (109) for accommodating the wafer. The heating element chamber includes: a panel with an intake vent; a means (65) for intaking air from the source of air through the intake vent to produce a flow of air across the heating element; and a means for separating the flow of air in one heating element chamber from the other heating element chamber. The flow of cooling air across the heating element is separated from that across the heating element in other heating element chamber.

COPYRIGHT: (C)2008,JPO&INPIT


Inventors:
PECK KEVIN B
ERICKSON RONALD E
MATTHEWS STEPHEN H
Application Number:
JP2007197056A
Publication Date:
November 08, 2007
Filing Date:
July 30, 2007
Export Citation:
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Assignee:
THERMTEC INC
International Classes:
F27D1/00; C30B31/10; H01L21/22; F27B5/04; F27B5/14; F27D7/06; F27D21/00; H01L21/00; H01L21/31
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Shishido Kaichi
Nobuo Ogawa