Title:
FURNACE FOR SYNTHESIS OF COMPOUND SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPS5879897
Kind Code:
A
Abstract:
PURPOSE:To increase the rate of synthesis of high purity crystal in a synthesizing furnace containing a crucible in a high temperature zone, wherein the semiconductor crystal is deposited by the reaction with raw material vaporize in the low temperature zone, by furnishing a heating means and a heat-absorbing means above and below the crucible, respectively. CONSTITUTION:The vaporizable raw material 11 contained in the low-temperature zone L of the sealed tube 10 is evaporated and transferred to the high- temperature zone H containing the crucible 12. The crucible 12 is filled with a solution from which a compound semiconductor crystal is to be deposited. A heater 14 is placed above the crucible 12, and a temperature-equalizing plate 15 and a heat-absorbing material 16 are placed under the crucible 12. The solution reacts with the vaporized raw material at the upper surface of the crucible and forms a crystal film 28 of the compound semiconductor. A compound semiconductor having high purity and containing an element having high vapor pressure can be synthesized in high efficiency under low pressure.
Inventors:
OOSAKA JIROU
HOSHIKAWA KEIGO
HOSHIKAWA KEIGO
Application Number:
JP17615781A
Publication Date:
May 13, 1983
Filing Date:
November 02, 1981
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
C30B11/04; C30B11/00; H01L21/208; (IPC1-7): C30B11/04; H01L21/02
Attorney, Agent or Firm:
Amamiya Masaki