Title:
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP3490103
Kind Code:
B2
Abstract:
PURPOSE: To improve light emission life by preventing current from concentrating in a light emitting diode of a GaN compound semiconductor.
CONSTITUTION: This device is provided with a high carrier concentration n+ layer 3, a low carrier concentration n layer 4, an i layer 5, an electrode 80 to the high carrier concentration n+ layer 3 and an electrode 70 to the i layer 5. A thin insulating film 6 is provided between the electrode 70 to the i layer 5 and the i layer 5. The insulating film 6 is as thick as to allow electrons to tunnel. Current is injected to the i layer 5 on a surface uniformly by the insulating film 6. Since current concentration in the i layer 5 is thereby prevented, dielectric breakdown is prevented and light emission life is improved.
Inventors:
Masato Tamaki
Kuki Kato
Masahiro Kotaki
Katsuhide Manabe
Ichiro Tajima
Kenji Nakajima
Kuki Kato
Masahiro Kotaki
Katsuhide Manabe
Ichiro Tajima
Kenji Nakajima
Application Number:
JP30052792A
Publication Date:
January 26, 2004
Filing Date:
October 12, 1992
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
Toyota Central R & D Labs.
Toyota Central R & D Labs.
International Classes:
H01L29/45; H01L33/04; H01L33/32; H01L33/40; H01L33/44; H01L33/62; (IPC1-7): H01L33/00
Domestic Patent References:
| JP4209578A | ||||
| JP63188977A | ||||
| JP5762579A | ||||
| JP5723284A | ||||
| JP5680183A | ||||
| JP4348085A | ||||
| JP467689A | ||||
| JP63260138A |
Attorney, Agent or Firm:
Osamu Fujitani