Title:
GAN-BASED SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2008072042
Kind Code:
A
Abstract:
To provide a GaN-based semiconductor element for preventing a gate electrode from being cut easily even if a wafer is cracked.
On a sapphire substrate 1, a GaN buffer layer 2, an undoped GaN layer 3, an n+-type GaN drain layer 4, an n--type GaN layer 5, and a p-type GaN-based channel layer 6 are laminated. On the p-type GaN-based channel layer 6, an n-type GaN source layer 8 having two ridges, namely a ridge A and a ridge B, is formed. The longitudinal direction of the gate electrode 9 formed on an insulation film is formed along the m surface of the p-type GaN-based channel layer 6.
Inventors:
SHAKUDA YUKIO
Application Number:
JP2006251146A
Publication Date:
March 27, 2008
Filing Date:
September 15, 2006
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L29/786; H01L21/28; H01L29/06; H01L29/12; H01L29/417; H01L29/78; H01L29/80
Domestic Patent References:
| JP2002252423A | 2002-09-06 | |||
| JP2006190991A | 2006-07-20 | |||
| JP2004327766A | 2004-11-18 | |||
| JP2002252423A | 2002-09-06 | |||
| JP2006190991A | 2006-07-20 |
Foreign References:
| US20050145883A1 | 2005-07-07 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito
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