Title:
GAP GREEN LIGHTTEMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS5661182
Kind Code:
A
Abstract:
PURPOSE:To obtain a GaP green light-emitting element having an improved luminance and reliability by specifying that the donor concentration of the N<-> type GaP layer of a GaP green light-emitting element having a P<+>N<->N<+>N structure be less than 5X10<16>/cm<3>, and providing a protective film on the exposed portion of the P-N junction. CONSTITUTION:On an N type GaP substrate, a composite structure comprising an N<+> type GaP layer, N<-> type GaP layer and P<+> type GaP layer is formed by epitaxial growth to form a GaP green light-emitting element. In this, the donor concentration of the N<-> type GaP layer is specified: less than 5X10<16>/cm<3>. Moreover, the exposed portion of the P-N junction is covered with an oxide film of Al2O3 or the like. Such specification of the donor concentration prevents the deterioration of the optical output, and also the existence of the Al2O3 protective film prevents the deterioration. Therefore, the life characteristics can be improved.
Inventors:
KAWACHI MASARU
IWAMOTO MASAMI
BETSUPU TATSUROU
IWAMOTO MASAMI
BETSUPU TATSUROU
Application Number:
JP13635979A
Publication Date:
May 26, 1981
Filing Date:
October 24, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L33/14; H01L33/30; (IPC1-7): H01L33/00