Gas injection device - Toshiba Mitsubishi Electric Industrial Systems Co., Ltd.

Title:

Gas injection device

Document Type and Number:

Japanese Patent JP6321200

Kind Code:

B2

Abstract:

The present invention provides a gas jetting apparatus capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus (100) according to the present invention includes a gas jetting cell unit (1) for jetting a gas toward a treatment-target object (202). The gas jetting cell unit (1) includes a first cone-shaped member (3) and a second cone-shaped member (2). A gap (do) is formed between a side surface of a first cone shape (3) and a side surface of the second cone-shaped member (2). Apex sides of the cone-shaped members (2, 3) face the treatment-target object (202).

More Like This:

WO/2021/157995	SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP4711624	Integration of ALD Tantalum Nitride and Alpha Phase Tantalum for Copper Electrode Formation Applications
WO/2003/023835	PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD) EQUIPMENT AND METHOD OF FORMING A CONDUCTING THIN FILM USING THE SAME THEREOF

Inventors:

Yoichiro Tabata
Kensuke Watanabe
Shinichi Nishimura

Application Number:

JP2016556095A

Publication Date:

May 09, 2018

Filing Date:

October 29, 2014

Export Citation:

Click for automatic bibliography generation Help

Assignee:

Toshiba Mitsubishi Electric Industrial Systems Co., Ltd.

International Classes:

C23C16/455; C23C16/509; H01L21/31; H05H1/30

Domestic Patent References:

JP2008218254A
JP7029827A
JP5152350A
JP2012255203A
JP49089717A

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

Previous Patent: A manufacturing method of polycrystalline silicon

Next Patent: ARTICLE CHARGER