Title:
GAS PHASE GROWTH METHOD
Document Type and Number:
Japanese Patent JPS5489576
Kind Code:
A
Abstract:
PURPOSE:To increase the adaptability of photo resist, by slightly changing the surface of polycrystal silicon film in gas growing into oxide film. CONSTITUTION:The field oxide film 2 on the silicon substrate 1 is formed and after selectively removing the oxide film 2 on the gate region, the gate oxide film 3 is formed with re-oxidation. Next, the polycrystal silicon film 4 is formed on the oxide film 3, it is aged in the furnace at a given temperature, growing very thin oxide film 5 on the surface of the film 4. The mask 6 is formed by coating the photo resist on the film 5 with exposure and development. Succeedingly, after evaporating excessive solvent in the mask 6 with heat treatment, the polycrystal silicon not covered with the mask 6 is selectively removed and the mask 6 is removed after forming the pattern of the film 4.
Inventors:
KOSHIMIZU HIROSHI
Application Number:
JP15884877A
Publication Date:
July 16, 1979
Filing Date:
December 27, 1977
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/318; H01L21/027; H01L21/306; H01L21/314; (IPC1-7): H01L21/306; H01L21/314