Title:
GAS SENSOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3310444
Kind Code:
B2
Abstract:
PURPOSE: To achieve a gas sensor with a plurality of gas detection elements with different characteristics using a small types of sensor materials and catalysis substances by a simple manufacturing-process.
CONSTITUTION: Catalyst layers 113-133 and 134-154 where a catalyst substance is laminated by changing a carrier area are formed on a plurality of same metal oxide semiconductor gas sensors 112-152 and a plurality of gas detection elements 110-150 with different characteristics are formed. Therefore, by simply changing the carrier area, only a single film formation process is required for a sensor material and each catalysis substance, thus eliminating the need for performing film formation process by the number of gas detection elements.
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Inventors:
Ichiro Takatsu
Application Number:
JP2642494A
Publication Date:
August 05, 2002
Filing Date:
February 24, 1994
Export Citation:
Assignee:
NOK Co., Ltd.
International Classes:
G01N27/12; (IPC1-7): G01N27/12
Domestic Patent References:
| JP6029651A |
Attorney, Agent or Firm:
Takahisa Sato