Title:
GASEOUS ION SOURCE FOR OXYGEN ION INJECTION
Document Type and Number:
Japanese Patent JP2003031140
Kind Code:
A
Abstract:
To provide a method and a device of generating oxygen ion for an ion source using an arc chamber containing at least one oxidizable metal.
For an ion source using an arc chamber containing at least one oxidizable metal, the method includes a process of supplying gaseous H2O to an arc chamber, and a process of making the arc chamber operate within a range of temperature at which, the free energy for formation of gaseous H2O is lower than the free energy for formation of oxidizable metal oxide.
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Inventors:
REYES JAIME M
Application Number:
JP2002135193A
Publication Date:
January 31, 2003
Filing Date:
May 10, 2002
Export Citation:
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT
International Classes:
H01J27/04; H01J27/08; H01J37/08; H01L21/265; H01J27/02; (IPC1-7): H01J27/02; H01J27/08; H01J37/08; H01L21/265
Attorney, Agent or Firm:
Sumio Takeuchi (1 outside)
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