Title:
GASEOUS PHASE SYNTHESIS OF DIAMOND
Document Type and Number:
Japanese Patent JPH03141196
Kind Code:
A
Abstract:
PURPOSE:To contrive to improve the quality of diamond by flowing an inert gas between electrodes, generating a plasma from the inert gas with a DC discharge, feeding H2 and a gaseous carbon compound on a substrate and subsequently irradiating the substrate with a plasma jet. CONSTITUTION:A substrate 10 such as Mo is fixed on a substrate holder 5, and after a vacuum chamber 1 is evacuated with an evacuator 6, a discharge gas comprising Ar gas or a mixture of Ar+He is flown between an anode 7 and a cathode 8 through a gas-feeding pipe 9. A desired electric current is applied between the anode 7 and the cathode 8 from a constant current arc source to irradiate the substrate 10 with a plasma jet such as Ar. H2 gas and a gaseous carbon compound are fed from a gas-feeding pipe 3 and a gas-feeding pipe 4, respectively, into the generated plasma jet to keep the vacuum chamber 1 at 1-13.3kpa, thereby forming a good diamond film 13 having good adhesivity to the substrate 10.
Inventors:
NOTO NOBUHIRO
Application Number:
JP28088489A
Publication Date:
June 17, 1991
Filing Date:
October 27, 1989
Export Citation:
Assignee:
HITACHI KOKI KK
International Classes:
C30B29/04; (IPC1-7): C30B29/04
Previous Patent: DIAMOND FILM CLADDING
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