Title:
GATE CIRCUIT FOR GATE TURN-OFF THYRISTOR
Document Type and Number:
Japanese Patent JPS57151264
Kind Code:
A
Abstract:
PURPOSE:To reduce the capacity of a gate power source and to prevent the damage of a gate circuit by detecting a voltage between the gate and the cathode of a gate turn-off thyristor (GTO) connected in anti-parallel to a diode and flowing a gate current only when a gate voltage is higher than the cathode voltage. CONSTITUTION:One input terminal of an arithmetic amplifier 13 is connected to the gate of a GTO 4 through a resistor 17, and the other input is connected to the cathode of the GTO 4. The output terminal of the amplifier 13 is connected to one input terminal through a resistor 18, and is connected to the other input terminal of the amplifier 13 through resistors 19, 20. The base of a transistor (TR) 14 is connected to the connecting point of resistors 19, 20 through a resistor 21, and is connected to the cathode of a diode 22. In this manner, a gate current is flowed only when the voltage between the anode and the cathode of the GTO becomes forward, thereby reducing the capacity of a power source for the gate.
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Inventors:
KOGA KENJI
Application Number:
JP3650481A
Publication Date:
September 18, 1982
Filing Date:
March 16, 1981
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H02M1/06; H03K17/732; (IPC1-7): H02M1/06
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