Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING CAPACITIVE ELEMENT
Document Type and Number:
Japanese Patent JP3152290
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To manufacture with high production yield a capacitive element in a field plate or a similar capacitive element in a semiconductor device.
SOLUTION: A first silicon oxide layer 26 is formed on a semiconductor region 13. A first polysilicon layer is formed on the first silicon oxide layer 26. A second silicon oxide layer is formed by oxidizing the surface of the first polysilicon layer. A third silicon oxide layer 29 is formed by forming a mask on the second silicon oxide layer and locally oxidizing the first polysilicon layer. Upper conductive layers 30a to 30d are formed with polysilicon on the second and third silicon oxide layers 28 and 29.
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Inventors:
Akio Iwabuchi
Application Number:
JP26489897A
Publication Date:
April 03, 2001
Filing Date:
September 10, 1997
Export Citation:
Assignee:
Sanken Electric Co., Ltd.
International Classes:
H01L27/04; H01L21/822; H01L29/06; H01L29/78; (IPC1-7): H01L27/04; H01L21/822; H01L29/06
Domestic Patent References:
| JP6342164A | ||||
| JP62173764A | ||||
| JP5347381A |
Attorney, Agent or Firm:
Noritsugu Takano