To provide glass which has a low environmental load, excellent chemical durability and low surface charge density and which is especially suitable for covering a semiconductor element for low withstanding voltage.

The glass for covering the semiconductor element is characterized by including, in mass% as glass composition, 52-65% ZnO, 5-20% B₂O₃, 15-35% SiO₂ and 3-6% Al₂O₃ and not substantially containing lead. It is preferable that the glass composition additionally contains 0-5% Ta₂O₅, 0-5% MnO₂, 0-5% Nb₂O₅, 0-3% CeO₂ and Sb₂O₃.