PURPOSE: To impart uniform semiconductivity to discrete bodies to be coated with a film by making the distance between a substrate and an electrode greater than the diameter of the substrate and specifying the gas pressure in a reaction chamber and the power-to-gas volume ratio.
CONSTITUTION: A columnar substrate 4 to be coated with a film is arranged in a reaction vessel 1 and erected on the circumference. An electrode 2 is arranged so that the distance from the substrate 4 is made greater than the diameter of the substrate 4. A gas from the vapor growth of an a-Si-based semiconductor film is introduced from a gas inlet 8, and blown against the substrate 4 from a gas injection port 9. A glow discharge is generated between the substrate 4 and the electrode 2 to vapor-grow an a-Si-based semiconductor film on the substrate 4 as the gas is dissociated. In this case, the pressure of the gas to be introduced is set at 10-4-0.2Torr, and the ratio of the high-frequency power to be impressed between the substrate 4 and the electrode 2 to the volume of gas to be introduced into the reaction chamber is controlled to 0.1-10W/sccm.
OKAWA KAZUMASA
OKUBO DAIGORO
