GRADED TYPE CHANNEL FIELD-EFFECT TRANSISTOR

Title:

GRADED TYPE CHANNEL FIELD-EFFECT TRANSISTOR

Document Type and Number:

Japanese Patent JPH04247664

Kind Code:

A

Abstract:

PURPOSE: To improve mutual conductance of an MISFET. CONSTITUTION: A single peak percentage level is provided by inclining the germanium profile in a channel and charge carriers in the channel are located based on the single peak percentage level. Mutual conductance of an element is optimized by controlling the position of the carriers.

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Inventors:

EMANIYUERU KURABE
BAANAADO SUTEIIRU MEIAASON
YOHANESU MARIA KORUNERISU SUTO
SOFUII BUERUDONKUTOOBUANDEBURO

Application Number:

JP25922891A

Publication Date:

September 03, 1992

Filing Date:

October 07, 1991

Export Citation:

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Assignee:

IBM

International Classes:

H01L29/78; H01L21/335; H01L29/10; H01L29/161; H01L29/165; H01L29/778; (IPC1-7): H01L29/784

Attorney, Agent or Firm:

Kiyoshi Goda (2 outside)

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