Title:
GRAPHENE WITH GROWN METAL CHALCOGENIDE LAYER AND METHOD FOR PRODUCING THE SAME
Document Type and Number:
Japanese Patent JP2018100194
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide graphene on which metal chalcogenide layers are grown in both horizontal and vertical directions, which can remarkably enhance sensing efficiency in respect of light, harmful substance, etc., and catalyst property when used as a hydrogenation catalyst or an electrode for photocatalyst.SOLUTION: A process for producing graphene on which a metal chalcogenide layer is grown comprises the steps of: growing a graphene layer on a cupper foil by CVD method; transferring the graphene layer to an SiO/Si substrate; washing the transferred graphene layer and then dispersing metal chalcogenide powder directly on the graphene layers; growing a metal chalcogenide layer in both horizontal and vertical directions under high grade gas atmosphere or depositing a layer containing carbon on the metal chalcogenide layer or another two-dimensional material by a plasma method.SELECTED DRAWING: Figure 1
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Inventors:
GOLAP KALITA
TANEMURA MASAYUKI
MAHYAVANSHI RAKESH DAYARAM
TANEMURA MASAYUKI
MAHYAVANSHI RAKESH DAYARAM
Application Number:
JP2016246284A
Publication Date:
June 28, 2018
Filing Date:
December 20, 2016
Export Citation:
Assignee:
NAGOYA INST TECH
International Classes:
C01B32/15; C01B32/18; C01B32/182; C01G41/00