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Title:
GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE
Document Type and Number:
Japanese Patent JP2013060347
Kind Code:
A
Abstract:

To provide a high-quality group 13 nitride crystal and a group 13 nitride crystal substrate.

A group 13 nitride crystal 25 has a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region 25a disposed on an inner side in a cross section intersecting c-axis, a third region 25d disposed on an outermost side in the cross section and having a crystal property different from that of the first region 25a, and a second region 25c disposed at least partially between the first region 25a and the third region 25d in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region 25a and that of the third region 25d.


Inventors:
HAYASHI MASAHIRO
SARAYAMA SHOJI
SATO TAKASHI
NANBU HIROSHI
KIMURA CHIHARU
MIYOSHI NAOYA
Application Number:
JP2011201216A
Publication Date:
April 04, 2013
Filing Date:
September 14, 2011
Export Citation:
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Assignee:
RICOH CO LTD
International Classes:
C30B29/38
Domestic Patent References:
JP2011157235A2011-08-18
JP2009212284A2009-09-17
JP2008094704A2008-04-24
JP2003292400A2003-10-15
JP2011157235A2011-08-18
JP2009212284A2009-09-17
Attorney, Agent or Firm:
Hiroaki Sakai



 
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