Title:
GROUP III NITRIDE EPITAXIAL SUBSTRATE, EPITAXIAL SUBSTRATE FOR GROUP III NITRIDE ELEMENT, AND GROUP III NITRIDE ELEMENT
Document Type and Number:
Japanese Patent JP3768943
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a new epitaxial substrate containing a sapphire single crystal base and an Al-containing group III nitride base film on which an Al-containing nitride film having low dislocation and excellent crystallinity can be formed.
SOLUTION: The crystalline direction of the major face of the sapphire single crystal base constituting the epitaxial substrate is preferably inclined by 0.02 to 0.3° from the <0001> direction (C-axis direction) to the <1-100> direction (m-axis direction). A surface nitride layer is deposited on the surface layer in the above major face side. Then the group III nitride base film containing at least Al, having ≤2,000 seconds half width in the X-ray rocking curve on the (10-12) plane and ≤3.5&angst surface roughness (Ra) in a 5 μm range, is formed on the major face of the sapphire single crystal base via the above surface nitride layer.
Inventors:
Tomohiko Shibata
Shigeaki Sumiya
Keiichiro Asai
Mitsuhiro Tanaka
Shigeaki Sumiya
Keiichiro Asai
Mitsuhiro Tanaka
Application Number:
JP2002268349A
Publication Date:
April 19, 2006
Filing Date:
September 13, 2002
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C30B29/38; C30B25/02; H01L21/20; H01L21/205; H01L33/16; H01L33/32; (IPC1-7): C30B29/38; H01L21/205; H01L33/00
Domestic Patent References:
| JP2153896A | ||||
| JP2001015443A | ||||
| JP2004507106A |
Other References:
趙晟煥他,AlN epilayerの結晶品質のbuffer layer依存性,第47回応用物理学関係連合講演会講演予稿集,2000年 3月28日,No.1,p.352
Z.Y.FAN et al,High temperature growth of AlN by plasma-enhanced molecular beam epitaxy,Materials Science and Engineering,1999年,vol.B67,p.80-87
田中光浩他,MOVPEによる高品質AlN/サファイア基板とGaN膜の高品質化,電子情報通信学会技術研究報告,2002年 5月23日,vol.102,no.80(SDM2002 13-27),p.9-14
Z.Y.FAN et al,High temperature growth of AlN by plasma-enhanced molecular beam epitaxy,Materials Science and Engineering,1999年,vol.B67,p.80-87
田中光浩他,MOVPEによる高品質AlN/サファイア基板とGaN膜の高品質化,電子情報通信学会技術研究報告,2002年 5月23日,vol.102,no.80(SDM2002 13-27),p.9-14
Attorney, Agent or Firm:
Kosaku Sugimura
Previous Patent: IMAGE FORMING APPARATUS AND REGISTRATION CORRECTION METHOD
Next Patent: METHOD AND DEVICE FOR GENERATING MODEL OF INDIVIDUAL
Next Patent: METHOD AND DEVICE FOR GENERATING MODEL OF INDIVIDUAL