GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME

Japanese Patent JP2016134610

A

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor element and a manufacturing method of the same, which inhibit the occurrence of cracks or the occurrence of warpage caused by a difference in thermal expansion coefficients of a substrate and a semiconductor layer.SOLUTION: A group III nitride semiconductor element manufacturing method comprises: a first group III nitride layer formation step of supplying a group III element-containing first gas without being plasmarized to a substrate 10 and plasmarizing a second gas containing at least a nitrogen gas and supplying the second gas to the substrate 10 to form a buffer layer 20 as a first group III nitride layer; and a second group III nitride layer formation step of supplying the group III element-containing first gas without being plasmarized to a buffer layer 20 and plasmarizing the second gas containing at least a nitrogen gas and supplying the second gas to the buffer layer 20 to form an AlN layer 30 as a second group III nitride layer.SELECTED DRAWING: Figure 1

JPH02216835	FIELD-EFFECT TRANSISTOR
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HORI MASARU
ODA OSAMU
SEKINE MAKOTO
KONDO HIROKI
ISHIKAWA KENJI

JP2015010726A

July 25, 2016

January 22, 2015

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UNIV NAGOYA

H01L21/205; H01L21/20; H01L21/336; H01L21/338; H01L29/778; H01L29/78; H01L29/786; H01L29/812; H01S5/323

Osamu Fujitani
Akinori Isshiki

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