Title:
GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2019134119
Kind Code:
A
Abstract:
To provide a Group-III nitride semiconductor light-emitting element that has an n-contact electrode having a low contact resistance with an n-type semiconductor layer, a high adhesion property to the n-type semiconductor layer and an insulating film, and a high reflective index.SOLUTION: A light-emitting element 100 is a flip chip. An n-type semiconductor layer 130 has an n-type contact layer 131 contacted with an n-electrode. The n-electrode has an n-contact electrode N1 contacted with the n-type contact layer 131. The n-contact electrode N1 covers an insulating film I1, and has a Ti layer N1a, an Al layer N1b, and an Ag layer N1c sequentially formed from the n-type contact layer 131. A film thickness of the Ti layer N1a is equal to or more than 2Å and equal to or less than 15Å. A film thickness of the Al layer N1b is equal to or more than 5Å and equal to or less than 30Å.SELECTED DRAWING: Figure 2
More Like This:
Inventors:
TOYA SHINGO
YABANETA KOSUKE
YABANETA KOSUKE
Application Number:
JP2018016814A
Publication Date:
August 08, 2019
Filing Date:
February 01, 2018
Export Citation:
Assignee:
TOYODA GOSEI KK
International Classes:
H01L33/36; H01L21/28; H01L33/32
Domestic Patent References:
| JP2016225609A | 2016-12-28 | |||
| JP2017216280A | 2017-12-07 | |||
| JPH11274562A | 1999-10-08 |
Foreign References:
| WO2012137462A1 | 2012-10-11 |
Attorney, Agent or Firm:
Osamu Fujitani
Akinori Isshiki
Tomohiro Sumiya
Akinori Isshiki
Tomohiro Sumiya