To provide a group III-V compound crystal-containing material containing a good quality group III-V compound crystal, and to provide a method for producing a group III-V compound crystal, by which a good quality group III-V compound crystal can be easily produced inexpensively.
A metal film 2 containing titanium or vanadium and having a thickness of 10-1,000 nm is deposited on a substrate 1 of silicon, sapphire, SiC or ZrB2 by a vapor deposition method or a sputtering method. Then, the metal film 2 is subjected to a heat treatment in an atmosphere in which a compound for patterning the metal film 2 exists. Thereby, the metal film 2 is patterned in an indeterminate form, wormhole-like holes or grooves 12 are formed, and the substrate 1 is exposed to bottom parts of the holes or grooves 12. After that, a group III-V compound crystal 4 is grown on the metal film 2 subjected to the heat treatment, in the surface of which the wormhole-like holes or grooves 12 are formed, by using, for example, an HVPE (Hydride Vapor Phase Epitaxy) method.
UEMATSU KOJI
HIROTA TATSU
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Masayuki Sakai
Nobuo Arakawa
Masato Sasaki
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